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| parameter typ. max. units r ja maximum junction-to-ambient 75 100 hexfet power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. thermal resistance v dss = -20v r ds(on) = 0.065 ultra low on-resistance p-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching lead-free rohs compliant, halogen-free parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -3.7 i d @ t a = 70c continuous drain current, v gs @ -4.5v -2.2 a i dm pulsed drain current -22 p d @t a = 25c power dissipation 1.3 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c e as single pulse avalanche energy 11 mj v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c micro3 ? s g 1 2 d 3 form quantity irlml6402trpbf micro3 ? package type standard pack orderable part number base part number ! " #$ %& ! " #$ %& parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.0a, v gs = 0v t rr reverse recovery time ??? 29 43 ns t j = 25c, i f = -1.0a q rr reverse recoverycharge ??? 11 17 nc di/dt = -100a/ s repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. source-drain ratings and characteristics -1.3 -22 # s d g '' for recommended footprint and soldering techniques refer to application note #an-994. !( ) *+ , $$ !& !+ starting t j = 25c, l = 1.65mh r g = 25 , i as = -3.7a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient ??? -0.009 ??? v/c reference to 25c, i d = -1ma ??? 0.050 0.065 v gs = -4.5v, i d = -3.7a ??? 0.080 0.135 v gs = -2.5v, i d = -3.1a v gs(th) gate threshold voltage -0.40 -0.55 -1.2 v v ds = v gs , i d = -250 a g fs forward transconductance 6.0 ??? ??? s v ds = -10v, i d = -3.7a ??? ??? -1.0 v ds = -20v, v gs = 0v ??? ??? -25 v ds = -20v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 8.0 12 i d = -3.7a q gs gate-to-source charge ??? 1.2 1.8 nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 2.8 4.2 v gs = -5.0v t d(on) turn-on delay time ??? 350 ??? v dd = -10v t r rise time ??? 48 ??? i d = -3.7a t d(off) turn-off delay time ??? 588 ??? r g = 89 t f fall time ??? 381 ??? r d = 2.7 c iss input capacitance ??? 633 ??? v gs = 0v c oss output capacitance ??? 145 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 110 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) -# r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current # . ! " #$ %& fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.25v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.25v 10 100 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = -15v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -3.7a ! " #$ %& fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 3 6 9 12 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -3.7a v = -10v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j / ! " #$ %& fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) -i , drain current (a) c d 25 50 75 100 125 150 0 5 10 15 20 25 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.7a -3.0a -3.7a 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0 ! " #$ %& fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 2.0 3.0 4.0 5.0 6.0 7.0 -v gs, gate -to -source voltage ( v ) 0.02 0.04 0.06 0.08 0.10 0.12 0.14 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ) id = -3.7a 0 5 10 15 20 25 30 -i d , drain current ( a ) 0.00 0.04 0.08 0.12 0.16 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) vgs = -4.5v vgs = -2.5v 1 ! " #$ %& micro3 (sot-23 / to-236ab) part marking information 0.08 0.88 0.01 0.89 0.95 b s c mi l l ime t e r s min e e e1 d l a a1 a2 c m o b s y mi n max max .036 .0375 b s c dime ns ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 bs c l1 l 0.40 0.60 .0118 b s c aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 e d 5 6 3 12 ccc c b a b 5 6 e e1 a2 a a1 bbb c a b 3x b aaa c 3 s urf 0 3x l l1 h 4 7 2.10 e1 1.90 b s c .075 b s c .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] r e comme nde d f oot p r int 3x 3x not es 1. dimens ioning and t ol e rancing pe r as me y14.5m-1994. 4 datum plane h is located at the mold parting line. 5 d at u m a and b t o b e de t e r mi n e d at dat u m p l an e h . 6 d i me ns i on s d and e 1 ar e me as u r e d at dat u m p l ane h . 2. dimensions are shown in millimeters and inches. 3. cont rolling dimension: millimet er. 7 dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236ab. f = irlml6401 a 2001 a 27 notes: this part marking information applies to devices produced after 02/26/2001 assembly lot code lead-free date code e = irlml6402 x = part number code reference : d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a letter y 8 2008 3 2003 1 2001 year 2002 2 5 2005 2004 4 2007 2006 7 6 2010 0 2009 9 year y c 03 work week 01 02 a w b 04 d 24 26 25 x z y work week w h = irlml5203 g = irlml2502 k h g f e d c b 2006 2003 2002 2005 2004 2008 2007 2010 2009 j y 51 29 28 30 c b d 50 x i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wire halogen free part number 52 z date code example: yww = 432 = df yww = 503 = 5c 2018 2013 2011 2012 2015 2014 2017 2016 2020 2019 2018 2013 2011 2012 2015 2014 2017 2016 2020 2019 w = irfml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 y = irlml2246 x = irlml2244 z = irfml9244 % ! " #$ %& ? 2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. 2 ! " #$ %& ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level cons umer (per jedec jes d47f ?? guidelines) moisture sensitivity level micro3 ? (sot-23) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated data sheet with new ir corporate template. ? updated package outline & part marking on page 7. ? ? added bullet point in the benefits "rohs compliant, halogen -free" on page 1. 4/28/2014 |
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